Browsing by Subject "G06F 11/1072"

Now showing items 1-3 of 3

    • Error correcting codes for rank modulation 
      Jiang, Anxiao; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-07-17)
      We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the ...
    • Rank modulation for flash memories 
      Jiang, Anxiao; Mateescu, Robert; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2012-08-14)
      We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The ...
    • Rank-modulation rewriting codes for flash memories 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...